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SQ3427EEV
www.vishay.com
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = - 10 V
R DS(on) ( ? ) at V GS = - 4.5 V
I D (A)
Configuration
- 60
0.082
0.115
- 5.5
Single
FEATURES
? Halogen-free According to IEC 61249-2-21
Definition
? TrenchFET ? Power MOSFET
? AEC-Q101 Qualified c
? 100 % R g and UIS Tested
? Typical ESD Protection 800 V
TSOP-6
Top V iew
(1, 2, 5, 6) D
? Compliant to RoHS Directive 2002/95/EC
1
6
3 mm
2
5
(3) G
3
2.85 mm
Marking Code: 8Dxxx
4
(4) S
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TSOP-6
SQ3427EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
- 60
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C
T C = 125 °C
I D
- 5.5
- 3.2
Continuous Source Current (Diode Conduction)
I S
- 6.3
A
Pulsed Drain
Current a
I DM
- 22
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
- 21
22
5
1.6
- 55 to + 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount b
R thJA
R thJF
110
30
°C/W
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
S11-2124-Rev. B, 07-Nov-11
1
Document Number: 66826
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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